Performance Analysis of Triple Junction GaInP/GaAs/Ge Tandem Solar Cells from Numerical Simulation

Abstract

The research aims to analyses the performance of triple junction GaInP/ GaAs/ Ge tandem solar cells. In this study the Analysis of Microelectronic and Photonic Structures (AMPS-1D) simulator has been used to estimate the effect layer thickness on the performance cells. The effect of layer thickness on the performance of triple junction GaInP/GaAs/Ge solar cell has been investigated elaborately. As the layer thickness of GaInP decreases, the efficiency rises. Meanwhile, increasing the n doped GaAs layer thickness slightly enhances the efficiency. The p doped GaAs layer thickness range from 500 nm to 3500 nm gives a variation in efficiency of about 1%. The results clearly indicate that the thickness variation of p-GaInP and n-GaInP significantly change the efficiency of the solar cell. The n doped GaAs layer thickness gives higher effect of the efficiency compared to p doped GaAs layer thickness.   Both n and p doped Germanium (Ge) don’t show any response when the thickness changed. The optimization achieved here indicates model structure for practical usage to achieve high efficiency GaInP/GaAs/Ge based solar cells.